Method for sharpening a probe

Etching a substrate: processes – Nongaseous phase etching of substrate – Projecting etchant against a moving substrate or controlling...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S011000, C216S097000, C216S100000

Reexamination Certificate

active

06280647

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates to a tip sharpening method as a probe manufacturing method usable for tunnel microscopes (STM), atomic force microscopes (AfM) and scanning proximity field optical microscopes (SNOM).
Conventionally, for usage in Sm and AFM there has been a demand for probes having a sharp form which is small in tip diameter and angle in order to obtain high resolution. On the other hand, in SNOM there has been a demand for a tip which is large in taper angle in order to improve the optical throughput at the probe tip. An interface etch method is utilized for sharpening an STM probe, while a method is used for an AFM probe that a sharp tip is formed by side etching effected under an on-silicon mask pattern. An optical fiber thermal drawing method and an etch method are used for a SNOM probe. In particular, the etch method includes a method to form a predetermined tip form by changing the composition of an etch solution and utilizing a difference in etch rate between the optical fiber core and the clad and a method developed by Turner et al. U.S. Pat. No. 4,469,554, 1984) to form a sharpened tip in an interface of two liquid layers wherein an organic liquid is placed on a hydrogen fluoride solution.
Each of the sharpening methods so far has been basically limited to a large extent in controlling the tip angle. For example, the optical fiber thermal drawing method has somewhat allows reduction or the tip angle but it is difficult to increase the tip angle and decrease the tip diameter according to that method. With the etch method, it is difficult to change the tip form without largely changing the etch condition including changing the probe material composition or the etch solution or etch gas composition. Also, according to the two-layer etch method a change in the taper angle is possible by changing the type of organic solvent. However, it is difficult to change the taper angle largely or obtain an arbitrary taper form. For this reason, the present invention provides a probe sharpening method capable of forming an arbitrary taper angle of a probe tip.
SUMMARY OF THE INVENTION
A probe preform (hereinafter “probe material”) is partly immersed in a liquid disposed in a container and having at least two layers including an etch solution for the probe and a non-etch solution that is lower in specific gravity than the etch solution and immiscible therewith when the probe material is etched to sharpen its tip, the probe material is slightly moved vertically (i.e., in height position) during etching. In this manner, a probe sharpening method was devised by which a tip taper form can be formed with an arbitrary angle.


REFERENCES:
patent: 4469554 (1984-09-01), Turner
patent: 5709803 (1998-01-01), Filas et al.
patent: 5772903 (1998-06-01), Hirsch
patent: 5800666 (1998-09-01), Bonham, Jr. et al.
patent: 5985166 (1999-11-01), Unger et al.
patent: 6030542 (2000-02-01), Koide et al.
patent: 7159113 (1995-06-01), None
patent: 7-159113 (1995-06-01), None
patent: 7-218516 (1995-08-01), None
patent: 7218516 (1995-08-01), None
patent: 10104244 (1998-04-01), None
patent: 10-104244 (1998-04-01), None
patent: 293515 A (1975-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for sharpening a probe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for sharpening a probe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for sharpening a probe will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2443779

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.