Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-07-12
1998-07-21
Popek, Joseph A.
Static information storage and retrieval
Floating gate
Particular biasing
36518524, G11C 1134
Patent
active
057843147
ABSTRACT:
A method for setting the threshold voltage of a reference memory cell of a memory device is described, the reference memory cell being used as a reference current generator for generating a reference current which is compared by a sensing circuit of the memory device with currents sunk by memory cells to be sensed, belonging to a memory matrix of the memory device. The method comprises a first step in which the reference memory cell is submitted to a change in its threshold voltage, and a second step in which the threshold voltage of the reference memory cell is verified. The second step provides for performing a sensing of the reference memory cell using a memory cell with known threshold voltage belonging to the memory matrix as a reference current generator for generating a current which is compared by the sensing circuit with the current sunk by the reference memory cell.
REFERENCES:
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5386388 (1995-01-01), Atwood et al.
patent: 5444656 (1995-08-01), Bauer et al.
patent: 5481494 (1996-01-01), Tang et al.
Carrera Marcello
Dallabora Marco
Sali Mauro
Carlson David V.
Popek Joseph A.
Santarelli Bryan A.
SGS--Thomson Microelectronics S.r.l.
Tran Michael T.
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