Method for setting the lifetime of charge carriers in semiconduc

Details Method for setting the lifetime of charge carriers in semiconduc Method for setting the lifetime of charge carriers in semiconduc

1974-08-12

1976-04-27

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148 33, 148186, 357 91, H01L 21263

Patent

active

039532437

ABSTRACT:
A method of setting the lifetime of charge carriers in a semiconductor body by the formation of recombination centers in the semiconductor body. The quantity of the recombination centers forming material necessary to provide the desired concentration in the semiconductor body is applied to the surface of the semiconductor body and into the surface thereof by ion implantation, and thereafter, in order to diffuse the material into the semiconductor body, the body is heated until an approximately stationary value for the charge carrier lifetime has developed in the entire volume of the body.

REFERENCES:
patent: 3184347 (1965-05-01), Hoerni
patent: 3473976 (1969-10-01), Castrucci et al.
patent: 3640783 (1972-02-01), Bailey
patent: 3655457 (1972-04-01), Duffy et al.

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