Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-29
2009-06-16
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
07548464
ABSTRACT:
A method for setting a programming start bias for a flash memory device to perform a programming operation is provided. First, the method performs pre-programming to change a threshold voltage distribution of a selected transistor using a first programming voltage and detects the maximum threshold voltage level of the changed threshold voltage distribution. The method then calculates the difference between the detected maximum threshold voltage level and a target maximum threshold voltage level and sets a start bias to a voltage obtained by adding the calculated difference to the first programming voltage.
REFERENCES:
patent: 5959883 (1999-09-01), Brennan, Jr. et al.
patent: 6392931 (2002-05-01), Pasotti et al.
patent: 6519184 (2003-02-01), Tanaka et al.
patent: 7085168 (2006-08-01), Lee et al.
patent: 7184336 (2007-02-01), Chiang et al.
patent: 7379342 (2008-05-01), Park et al.
patent: 2006/0077736 (2006-04-01), Nakagawa et al.
patent: 11-031391 (1999-02-01), None
patent: 1020060037648 (2006-05-01), None
patent: 1020060075161 (2006-07-01), None
patent: 1020060107689 (2006-10-01), None
Hynix / Semiconductor Inc.
Phung Anh
Townsend and Townsend / and Crew LLP
LandOfFree
Method for setting programming start bias for flash memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for setting programming start bias for flash memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for setting programming start bias for flash memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4106844