Method for separating semiconductor substrate

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

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Details

C438S460000, C438S462000, C438S464000, C257SE21001

Reexamination Certificate

active

07550367

ABSTRACT:
A method of separating a semiconductor substrate having an implementation member attached thereon includes a dividing process for at least the implementation member on the semiconductor substrate along a separation line, a placing process for film member on a same side as the implementation member, a forming process area by irradiating a laser beam from at least one of a first side of the semiconductor substrate having the implementation member and a second side that is an opposite side of the first side of the semiconductor substrate along the separation line with a focusing point of the laser beam aligned with a substance in the semiconductor substrate and severing/removing at least one semiconductor chip at the separation line from the semiconductor substrate.

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