Method for separating a substrate of a group III nitride semicon

Details Method for separating a substrate of a group III nitride semicon Method for separating a substrate of a group III nitride semicon

1998-01-30

2000-03-07

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

372 45, 438 47, H01L 21304

Patent

active

060339276

ABSTRACT:
A wafer is diced up to a depth of 15 .mu.m from the surface of a sapphire substrate along a dicing line set in the center of a processed region between electrodes for respective devices by using a blade having a width narrower than the width of the processed region, so that separation grooves are formed. In the present invention, the first contact layer, the second contact layer, the p layer, the light-emitting layer and the n layer are arranged in a region between a side surface of the blade and a side wall of the electrode formation region. Accordingly, stress is concentrated into an intersection line of the electrode formation region and the side wall which is erected so as to be L-shaped. Thus, cracks generated at the time of dicing are formed-toward the intersection line. As a result, the cracks never enter into the electrode formation region and, accordingly, never enter into the lower portion of the electrode. Accordingly, the current path for the electrode is prevented from being disturbed by the cracks.

REFERENCES:
patent: 5604763 (1997-02-01), Kato et al.
patent: 5811319 (1998-09-01), Koike et al.

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