Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reissue Patent
2004-12-23
2011-10-11
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257SE21568, C257SE21570
Reissue Patent
active
RE042830
ABSTRACT:
A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
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patent: 5277748 (1994-01-01), Sakaguchi et al.
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patent: 5459081 (1995-10-01), Kajita
Matsushita Substantive Motion 1 dated Apr. 15, 2005 with Exhibit List to Matsushita Substantive Motion 1 and Exhibits 2001-2005.
Board of Patent Appeals and Interferences Decision on Motion-Bd. R. 127—Oct. 26, 2005.
Matsushita Takeshi
Tayanaka Hiroshi
Lee Hsien-ming
SNR Denton US LLP
Sony Corporation
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