Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2008-09-11
2010-10-05
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C323S233000, C323S313000, C323S315000, C327S512000, C327S539000, C327S541000, C327S543000
Reexamination Certificate
active
07808068
ABSTRACT:
Embodiments of the invention include a temperature sensor method for providing an output voltage response that is linear to the temperature of the integrated circuit to which the temperature sensor belongs and/or the integrated circuit die on which the temperature sensor resides. The output voltage of the temperature sensor has an adjustable gain component and an adjustable voltage offset component that both are adjustable independently based on circuit parameters. The inventive temperature sensor includes an offset circuit that diverts a portion of current from the scaled PTAT current before the current is sourced through the output resistor. The offset circuit includes a bandgap circuit arrangement, a voltage to current converter arrangement, and a current mirror arrangement that are configured to provide a voltage offset adjustable based on independent circuit parameters such as resistor value ratios and transistor device scaling ratios. The gain of the temperature sensor also is based on similar independent circuit parameters.
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Agere Systems Inc.
Ngo Ngan
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