Method for semiconductor wafer etching

Electric heating – Metal heating – By arc

Reexamination Certificate

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C219S121410, C219S678000, C156S345410, C438S799000

Reexamination Certificate

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06914208

ABSTRACT:
A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.

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