Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-05-17
2011-05-17
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S443000, C438S459000, C438S474000, C438S479000, C716S030000, C716S030000, C257S347000, C257SE21249, C257SE21563
Reexamination Certificate
active
07943482
ABSTRACT:
A design structure is provided for a semiconductor device having radiation hardened buried insulators and isolation insulators in SOI technology. The device includes a first structure and a second structure. The first structure includes: a radiation hardened BOX layer under an active device layer; radiation hardened shallow trench isolation (STI) structures between active regions of the active device layer and above the radiation hardened BOX layer; metal interconnects in one or more interlevel dielectric layers above gates structures of the active regions. The second structure is bonded to the first structure. The second structure includes: a Si based substrate; a BOX layer on the substrate; a Si layer with active regions on the BOX; oxide filled STI structures between the active regions of the Si layer; and metal interconnects in one or more interlevel dielectric layers above gates structures. At least one metal interconnect is electrically connecting the first structure to the second structure.
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Aitken John M.
Cannon Ethan H.
International Business Machines - Corporation
Kotulak Richard
Pham Thanh V
Roberts Mlotkowski Safran & Cole P.C.
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