Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-02-19
2000-12-26
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
438249, 438250, 438267, 438286, 438293, C30B 2504
Patent
active
061652644
ABSTRACT:
The invention provides a method for selective growth of semiconductor crystals, including the step of forming a semiconductor layer in a selected region of a semiconductor substrate by using a mask, the semiconductor layer being controlled with respect to atomic ordering or natural super lattice (NSL). It is possible by the invention to control the energy gap, optical anisotropy and electrically conductive anisotropy of a semiconductor layer, and also possible by the invention to carry out two-dimensional control of material properties in a substrate in accordance with a pattern of a mask.
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Gomyo Akiko
Makita Kikuo
Kunemund Robert
NEC Corporation
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