Method for self-aligned punchthrough implant using an etch-back

Details Method for self-aligned punchthrough implant using an etch-back Method for self-aligned punchthrough implant using an etch-back

1993-06-23

1995-03-21

Fourson, George

Fishing, trapping, and vermin destroying

437 35, 437 44, 437 45, 437 28, 437 29, 437983, 437 41, H01L 21265

Patent

active

053995082

ABSTRACT:
A self-aligned MOSFET incorporating a punchthrough implant, and the method for forming such a transistor. A dielectric layer is used as a hard mask over a semiconductor substrate. A portion of the dielectric layer is removed to expose a region of the semiconductor substrate. A punchthrough implant is made with the remaining portion of the dielectric layer acting as a mask layer such that the doping concentration is raised by the punchthrough implant only in the exposed region of the semiconductor substrate. A doped layer of polysilicon is formed over the region into which the implant was made to provide a self-aligned gate over the highly doped region. A source and drain are formed on opposite sides of the doped region. A protective layer is formed over the device and metallized contacts are formed to the source, drain, and gate.

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patent: 5219777 (1993-06-01), Kang
Wolf, S., "Silicon Processing for the VLSI ERA", Lattice Press, Sunset Beach, Calif., 1990, vol. 2, p. 27.

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