Method for selectively wet etching aluminum gallium arsenide

Details Method for selectively wet etching aluminum gallium arsenide Method for selectively wet etching aluminum gallium arsenide

1988-12-28

1990-07-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437229, 148DIG15, 148DIG56, 156625, 156654, 156655, 372 50, 357 16, 357 17, H01L 2100, H01L 2102, H01L 21208, H01L 2968

Patent

active

049435400

ABSTRACT:
A method for selectively etching higher aluminum concentration AlGaAs in the presence of lower aluminum concentration AlGaAs or GaAs, preferably at room temperature. The AlGaAs is first cleaned with a solution of NH.sub.4 OH and rinsed. The AlGaAs is then etched in a solution of HF. If photoresist is used on the AlGaAs, the photoresist may first be baked to increase the adhesion of the photoresist to the AlGaAs and to "toughen" the photoresist to reduce undercutting thereof. Agitation is applied to the AlGaAs or the etchant to assist in the uniform etching of the AlGaAs.

REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 4162337 (1979-07-01), D'Asaro et al.
Wu, X., Select. Etch. Charact. of HF for Al.sub.x Ga.sub.1-x As, Elect. Letters, vol. 21, pp. 558-559, 1985.
Kenefick, K., Select. Etch. Charact. of Peroxide/Ammonium-Hydroxide Solns for GaAs/Al.sub.0.16 Ga.sub.0.84 As, J. Electrochem. Soc.: Solid State Sci. and Tech., vol. 129, No. 10, Oct. 1982, pp. 2380-2382.
Ghandhi, S., VLSI Fabrication Principles, pp. 542 and 546, Wiley & Sons, 1983.
Colclaser, R., Microelectronics: Processing and Device Design, p. 39, Wiley & Sons, 1980.

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