Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-03-21
2011-10-04
Ahmed, Shamim (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S696000
Reexamination Certificate
active
08030218
ABSTRACT:
Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch.
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Ahmed Shamim
Gates Bradford
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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