Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-03-30
2008-11-18
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S680000, C257SE21170, C257SE21304, C257SE21632
Reexamination Certificate
active
07452818
ABSTRACT:
The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).
REFERENCES:
patent: 5953612 (1999-09-01), Lin et al.
patent: 6074921 (2000-06-01), Lin
patent: 6143613 (2000-11-01), Lin
patent: 6420273 (2002-07-01), Lin
Bhatt Neel
Hosein Asadd M.
Hunt Kyle
Morrison William R.
Vialpando Brian L.
Brady III Wade J.
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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