Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1987-06-19
1990-02-20
Beck, Shrive
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
4272551, 4273831, 437228, B05D 512
Patent
active
049025333
ABSTRACT:
A process for selectively depositing a metal such as tungsten on a substrate material is provided. In one form, a layer of insulating material such as silicon dioxide is formed on the substrate. A layer of either aluminum oxide or titanium oxide is then formed over the substrate by a spin-on technique. A straight-wall contact region to the substrate is formed and tungsten may then be quickly and selectively formed in the contact region only with chemical vapor deposition at a high pressure. In another form, the aluminum oxide or titanium oxide layer may be thickly formed directly above the substrate without the silicon dioxide layer being formed.
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M. L. Green and R. A. Levy, "Structure of Selective Low Pressure Chemically Vapor--Deposited Films of Tungsten", J. Electrochem. Soc., vol. 132, No. 15, May 1985, pp. 1243-1250.
Klein Jeff L.
White Ted R.
Beck Shrive
Dang Vi Duong
King Robert L.
Motorola Inc.
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