Method for selectively controlling damascene CD bias

Details Method for selectively controlling damascene CD bias Method for selectively controlling damascene CD bias

2005-12-06

2005-12-06

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S700000, C438S712000

Reexamination Certificate

active

06972258

ABSTRACT:
A method for selectively etching a semiconductor feature opening to controllably achieve a critical dimension accuracy including providing a semiconductor wafer including a first opening formed extending through a thickness of at least one dielectric insulating layer and having an uppermost inorganic BARC layer; depositing a photoresist layer over the uppermost BARC layer and patterning the photoresist layer to form an etching pattern for etching a second opening overlying and encompassing the first opening; carrying out a first plasma assisted etching process to etch through a thickness of the BARC layer including a predetermined amount of CO in a plasma etching chemistry to increase an etching resistance of the photoresist layer; and, carrying out a second plasma assisted etching process to etch through a thickness portion of the at least one dielectric insulating layer to form the second opening.

REFERENCES:
patent: 6451703 (2002-09-01), Liu et al.
patent: 6613689 (2003-09-01), Liu et al.
patent: 6632746 (2003-10-01), Kanegae et al.
patent: 6638853 (2003-10-01), Sue et al.
patent: 6716571 (2004-04-01), Gabriel et al.
patent: 6787455 (2004-09-01), Tsai et al.
patent: 2004/0087167 (2004-05-01), Huang et al.
patent: 2004/0192058 (2004-09-01), Chu et al.

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