Method for selective tungsten sidewall and bottom contact format

Details Method for selective tungsten sidewall and bottom contact format Method for selective tungsten sidewall and bottom contact format

1995-05-25

1996-04-02

Fourson, George

Fishing, trapping, and vermin destroying

437195, 437200, H01L 2144

Patent

active

055040381

ABSTRACT:
A structure and method is provided for forming a contact plug in a contact hole in a dielectric layer on a semiconductor substrate. A polysilicon spacer is formed on the sidewalls and bottom of the contact hole. A metal, such as titanium, is deposited on the sidewalls and bottom of the hole and on the dielectric layer. The substrate is heated to form a metal silicide layer, such as TiSi.sub.x, and a metal nitride layer, such as TiN, on the side-walls and bottom of the contact hole. Any remaining metal layer and metal nitride layer formed in the heating process is removed. This leaves the titanium silicide layer on the contact hole walls. Tungsten is deposited to fill the contact hole where the metal silicide promotes the nucleation of the tungsten. In a preferred embodiment, to further promote nucleation of the tungsten, a second metal nitride layer is formed on the surface; of the metal silicide layer just prior to tungsten deposition.

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