Method for selective removal of materials present in one or...

Details Method for selective removal of materials present in one or... Method for selective removal of materials present in one or...

2003-03-14

2008-03-18

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

C216S059000, C216S083000, C134S006000, C134S007000

Reexamination Certificate

active

07344651

ABSTRACT:
There is provided a method and apparatus for selective removal of materials present on an object A in one or more layers B by surface abrasion by projection onto the surface of the object A of a moving fluid composed of a gas and solid particles conveyed in the gas. The apparatus comprises at least two reservoirs (11,13,15) for solid particles (21,22,23) of at least two different sizes communicating with a single reservoir30trough conduits (24,25,26). Each conduit (24,25,26) has an obturator (27,28,29) movable between open and closed positions and the single reservoir (30) is connected to a further conduit (36) provided with a nozzle (37) situated in the proximity of the surface layer B to be stripped. Particles (31) are mixed in “T” joint(34) with gas from an air compressor (35) and directed out of the nozzle (37). The average granulometry of the particles (31) is adjusted, by removing and/or adding other solid particles, so as to adapt the average granulometry of the particles (31)to the nature of the object A and/or the state of its surface.

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