Method for selective programming of a non-volatile memory

Details Method for selective programming of a non-volatile memory Method for selective programming of a non-volatile memory

1997-11-26

1999-03-02

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

365175, 36518523, 36518528, G11C 700

Patent

active

058779833

ABSTRACT:
A negative programming voltage is selectively applied to a word line of a nonvolatile memory by initially charging all of the word lines with the negative programming voltage. When the negative programming voltage is turned off, the word lines assume a floating state. Thereafter, a positive voltage is added to all the non-selected word lines in order to compensate for the negative charges.

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patent: 5659505 (1997-08-01), Kobayashi et al.
"A 5-V-Only 16-Mb Flash Memory with Sector Erase Mode" (Jinbo et al.), 8107 IEEE Journal of Solid-State Circuits, No. 11, Nov. 27, 1992.

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