Fishing – trapping – and vermin destroying
Patent
1996-01-16
1996-10-15
Fourson, George
Fishing, trapping, and vermin destroying
437193, 437201, 20419217, H01L 2128
Patent
active
055653839
ABSTRACT:
In a method for forming silicide films on a silicon substrate being formed thereon with a gate surrounded by gate side walls and being formed therein with diffusion regions, the silicide film being formed on a predetermined region of the silicon substrate at least except for an extremely thin film on the gate side walls. The method comprises the following steps. The silicon substrate is subjected to a collimated sputtering of metal atoms with use of a meshed mask on the silicon substrate surface to deposit a metal film on an entire surface of the silicon substrate, except for an extremely thin film on the vertical walls. The deposited metal film is further subjected to a heat treatment to react the metal film with the diffusion regions to thereby selectively form a metal silicide film at least on the diffusion regions, except for an extremely thin film on the vertical walls.
REFERENCES:
patent: 4660276 (1987-04-01), Hsu
patent: 5070038 (1991-12-01), Jin
patent: 5262354 (1993-11-01), Cote et al.
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5401675 (1995-03-01), Lee et al.
patent: 5426330 (1995-06-01), Joshi et al.
S. Wolf, "Silicon Processing for the VLSI Era, vol. 2: Process Integration", pp. 144, 145, 147, 148, Lattice Press, (1990).
Bilodeau Thomas G.
Fourson George
NEC Corporation
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