Method for selective deposition of tungsten on silicon

Details Method for selective deposition of tungsten on silicon Method for selective deposition of tungsten on silicon

1984-11-09

1986-06-17

Childs, Sadie L.

Coating processes

Interior of hollow article coating

Coating by vapor, gas, mist, or smoke

4272481, 427250, 427253, 427255, 4272552, 427259, 427299, 427309, B05D 722, C23C 1608

Patent

active

045956081

ABSTRACT:
A metal is selectively chemically vapor deposited on a substrate through openings in a moisture adsorbing mask layer by maintaining moisture in the mask layer. Thick metal layers are formed by precharging the mask with moisture. Also a cleaned tube is prepared for selective deposition by operating the process with a bare substrate until the tube is coated. The selective deposition is then performed.

REFERENCES:
patent: 3477872 (1969-11-01), Amick
patent: 3565676 (1971-02-01), Holzl
patent: 4349408 (1982-09-01), Tarng et al.
patent: 4404235 (1983-09-01), Tarng et al.
"A Planar Metallization Process--Its Application to Tri-Level Aluminum Interconnection"; T. Moriya et al.; IEEE; 1983; pp. 550-553.

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