Method for selective deposition of tungsten by chemical vapor de

Details Method for selective deposition of tungsten by chemical vapor de Method for selective deposition of tungsten by chemical vapor de

1987-04-10

1988-05-03

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427 55, 427 99, 427124, 427252, 427253, 427255, 4272551, C23C 1606, C23C 1608

Patent

active

047419288

ABSTRACT:
A method and heating apparatus are provided for selectively depositing metal films, such as tungsten, on the metal and semi-conductor surfaces of a silicon wafer by chemical vapor deposition. The method and heating apparatus serve to isolate the depositing surface of silicon wafers from both infrared radiation and the nucleating species which are vaporized by hot surfaces within the reaction chamber by means of a barrier which reflects or absorbs infrared radiation and condenses vaporized nucleating species before a nucleate metal deposition sites on metal or semiconductor surfaces.

REFERENCES:
patent: 1617161 (1927-02-01), Koref et al.
patent: 2885310 (1959-05-01), Olson et al.
patent: 3477872 (1969-11-01), Amick
patent: 3565676 (1971-02-01), Holzl
patent: 3687722 (1972-08-01), Saxena
patent: 3697342 (1972-10-01), Cuomo
patent: 3697343 (1972-10-01), Cuomo et al.
patent: 3785862 (1974-01-01), Grill
patent: 3862397 (1975-01-01), Anderson et al.
patent: 3911194 (1975-10-01), Dejachy et al.
patent: 4138512 (1979-02-01), Glaski
patent: 4349408 (1982-07-01), Tarng et al.
patent: 4357365 (1982-11-01), McCarty
patent: 4404235 (1983-09-01), Tarng et al.
patent: 4517225 (1985-05-01), Broadbent
patent: 4540607 (1985-09-01), Tsao
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4595608 (1986-06-01), King et al.
patent: 4597167 (1986-07-01), Moriya et al.
patent: 4605566 (1986-08-01), Matsui et al.
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4619840 (1986-10-01), Goldman et al.
patent: 4650696 (1986-03-01), Raby
patent: 4650698 (1986-03-01), Moriya et al.
patent: 4653428 (1987-03-01), Wilson et al.

Affiliated with

Also associated with

Rating

Method for selective deposition of tungsten by chemical vapor de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for selective deposition of tungsten by chemical vapor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selective deposition of tungsten by chemical vapor de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1505270