Method for selective deposition of refractory metals on silicon

Details Method for selective deposition of refractory metals on silicon Method for selective deposition of refractory metals on silicon

1989-03-13

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437187, 437 40, 437 41, H01L 2144

Patent

active

050844172

ABSTRACT:
Selective deposition of a refractory metal on a silicon substrate utilizing high temperature and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.

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