Method for selective deposition of layer structures consisting o

Details Method for selective deposition of layer structures consisting o Method for selective deposition of layer structures consisting o

1983-02-09

1985-02-26

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 96, B05D 512, C23C 1108

Patent

active

045017697

ABSTRACT:
Structured layers composed of high melting point metal silicides, such as tantalum silicide, are selectively deposited on substrates having at least some silicon and some non-silicon regions, such as are used in thin-film and semiconductor technology, by thermal decomposition of gaseous silicon and halogen compounds containing a high melting point metal in a reaction gas and depositing the metal silicide onto the silicon regions of the substrates while providing a gaseous hydrogen halide, such as hydrogen chloride, to the reaction gas and adjusting the substrate deposition temperature and the composition of the reaction gas to values at which a silicide nucleation in substrate regions, other than silicon regions, is suppressed during deposition of the metal silicide from the gaseous phase due to the presence of the hydrogen halide. The invention is useful for producing contact track levels in VLSI circuits.

REFERENCES:
patent: 3801365 (1974-04-01), Hrzek
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4228212 (1980-10-01), Brown et al.
patent: 4283439 (1981-08-01), Higashinakagawa et al.
patent: 4285761 (1981-08-01), Fatula et al.
patent: 4332839 (1982-06-01), Levinstein et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4389257 (1983-06-01), Geipel et al.
E. Kinsbron et al., "High Conductivity Silicide on Polysilicon By Lift-Off/Reactive Sputter Edge", Abstracts of the Fifth International Thin-Film Congress in Herzlia (Israel), Sep. 1981, p. 193.
C. M. Melliar-Smith et al., "Chemical Vapor Deposited Tungsten for Semiconductor Metallizations", J. Electrochem. Soc., vol. 121, No. 2, (1973), pp. 298-303.

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