Method for selective deposition of a thin self-assembled...

Details Method for selective deposition of a thin self-assembled... Method for selective deposition of a thin self-assembled...

2008-01-09

2010-06-01

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C257SE23165

Reexamination Certificate

active

07728436

ABSTRACT:
A method for selective deposition of self-assembled monolayers to the surface of a substrate for use as a diffusion barrier layer in interconnect structures is provided comprising the steps of depositing a first self-assembled monolayer to said surface, depositing a second self-assembled monolayer to the non-covered parts of said surface and subsequently heating said substrate to remove the first self-assembled monolayer. The method of selective deposition of self-assembled monolayers is applied for the use as diffusion barrier layers in a (dual) damascene structure for integrated circuits.

REFERENCES:
patent: 6348240 (2002-02-01), Calvert et al.
patent: 6518168 (2003-02-01), Clem et al.
patent: 6919636 (2005-07-01), Ryan
patent: 7138333 (2006-11-01), Schmidt et al.
patent: 2002/0079487 (2002-06-01), Ramanath et al.

Affiliated with

Also associated with

Rating

Method for selective deposition of a thin self-assembled... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for selective deposition of a thin self-assembled..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selective deposition of a thin self-assembled... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4246454