Method for selective chemical vapor deposition of nanotubes

Details Method for selective chemical vapor deposition of nanotubes Method for selective chemical vapor deposition of nanotubes

2006-07-11

2006-07-11

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S800000

Reexamination Certificate

active

07074699

ABSTRACT:
A method of fabricating a nanotube structure which includes providing a substrate, providing a mask region positioned on the substrate, patterning and etching through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent based nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subsequent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.

REFERENCES:
patent: 6346189 (2002-02-01), Dai et al.
patent: 6528020 (2003-03-01), Dai et al.
patent: 6764874 (2004-07-01), Zhang et al.
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0088938 (2002-07-01), Colbert et al.

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