Method for selective area growth by liquid phase epitaxy

Details Method for selective area growth by liquid phase epitaxy Method for selective area growth by liquid phase epitaxy

1982-05-26

1984-08-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29569L, H01L 21208

Patent

active

044642113

ABSTRACT:
A lateral selective area liquid phase epitaxy method useful for the fabrication of, for example, a double barrier buried heterostructure laser, is described.

REFERENCES:
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patent: 4384398 (1983-05-01), Dutt
Tsang, Logan and van der Ziel, Applied Physics Letters, vol. 40, No. 11, Jun. 1, 1982, pp. 942-944.
W. T. Tsang, "A New Current-Injection Heterostructure Laser: The Double-Barrier Double-Heterostructure Laser," Applied Physics Letters, 38, (11), Jun. 1, 1981, pp. 835-837.

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