Method for selecting reference images, method and apparatus...

Image analysis – Applications – Manufacturing or product inspection

Reexamination Certificate

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Reexamination Certificate

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10442955

ABSTRACT:
A method for selecting reference images, a method and an apparatus for inspecting patterns on a wafer, and a method for dividing a wafer into application regions. In a method for inspecting patterns according to at least one exemplary embodiment of the present invention, a plurality of reference dies may be selected and a difference in gray levels of images of the references dies may be determined. The reference dies may include a first die substantially centrally located on the wafer and at least one second die located at an edge portion of the wafer. One reference image is selected if the difference in gray levels is within a permitted tolerance and more than one reference image may be selected if the difference in gray levels is not within the permitted tolerance. A pattern inspection may be performed using the reference images.

REFERENCES:
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patent: 6229331 (2001-05-01), Kuwabara
patent: 6252412 (2001-06-01), Talbot et al.
patent: 6252981 (2001-06-01), Guest et al.
patent: 6850320 (2005-02-01), Shibata et al.
patent: 2001/0055415 (2001-12-01), Nozaki
patent: 11-233581 (1999-08-01), None
patent: 2001-133418 (2001-05-01), None
patent: 2001-135287 (2001-05-01), None
Hebb et al.; “The Effect of Patterns on Thermal Stress During Rapid Thermal Processing of Silicon Wafers”, IEEE Transaction on Semiconductor Manufacturing, vol. 11 No. 1, Feb. 1998.

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