Method for rotational wafer cleaning in solution

Details Method for rotational wafer cleaning in solution Method for rotational wafer cleaning in solution

1995-06-07

1997-12-16

Warden, Jill

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 10, 134 24, 134 31, 134 33, 134 37, B08B 302, B08B 312

Patent

active

056980400

ABSTRACT:
A method for a wafer cleaner using a rotation mechanism. Wafers are placed into a carrier 3 having grooves to maintain a spacing between the wafers. The carrier 3 and wafers are placed into a tank 1 with a cleaning solution. Nozzles 11 are used to direct pressurized solution against the wafers causing them to rotate within the carrier. In another embodiment, the tank 1 includes a megasonic transducer 16. In the second embodiment, the wafers are rotated while the megasonic transducer 16 is producing megasonic energy. The rotation of the wafers causes the cleaning solution and the megasonic energy to act on the wafers uniformly, and further exposes the edges of the wafers directly to the cleaning solution and the megasonic energy, thereby enhancing particle removal from the wafers. Other embodiments are provided.

REFERENCES:
patent: 4795497 (1989-01-01), McConnell et al.
patent: 4980300 (1990-12-01), Miyashita et al.
patent: 5071488 (1991-12-01), Takayama et al.
patent: 5071776 (1991-12-01), Matsushita et al.
patent: 5090432 (1992-02-01), Bran
patent: 5279704 (1994-01-01), Saito
patent: 5427622 (1995-06-01), Stanasolovich et al.
patent: 5439569 (1995-08-01), Carpio
patent: 5505785 (1996-04-01), Ferrell

Affiliated with

Also associated with

Rating

Method for rotational wafer cleaning in solution does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for rotational wafer cleaning in solution, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for rotational wafer cleaning in solution will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-202094