Method for rinsing and drying a substrate

Details Method for rinsing and drying a substrate Method for rinsing and drying a substrate

1998-08-10

1999-08-17

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 11, 134 254, 134 952, 1341021, B08B 1500

Patent

active

059388579

ABSTRACT:
In a wafer rinsing and drying method, a wet-treated wafer is put in a treating bath located in a closed chamber and is rinsed by a rising stream of a deionized water while supplying from position higher than the treating bath a vapor of IPA which is a water soluble solvent acting to lower the surface tension of the deionized water, so that the surface tension of the deionized water bath is weakened, and the extremely fine particles remaining on the surface of the deionized water bath is removed together with the deionized water overflowing from an upper edge of the treating bath. Thereafter, the supplying of the deionized water is stopped, but the IPA vapor is blown on to the surface of the deionized water from the high position for a predetermined period of time, so that a stationary deionized water bath is formed and a uniform and thick liquid IPA layer is formed on the surface of the stationary deionized water bath. In this condition, the wafer is pulled up so that the deionized water on the wafer surface is replaced with the liquid IPA. Thereafter, the deionized water is exhausted from the treating bath, and the closed chamber is evacuated so that the wafer is dried.

REFERENCES:
patent: 5520744 (1996-05-01), Fujikawa et al.
patent: 5685086 (1997-11-01), Ferrell
U.K. Search Report, Application No. GB 9817273.7, Nov. 13, 1998.
Semiconductor World, "Rinsing--its simplification and reliability", Press Journal, Mar. 1995.

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