Method for rinse treatment of a substrate

Radiation imagery chemistry: process – composition – or product th – Stripping process or element – Forming nonplanar image

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Details

430256, 430325, 430329, 430331, 430432, 430463, 252171, G03C 1112, G03C 500

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active

048247626

ABSTRACT:
The improvement of the invention consists in the use of a specific ether compound, e.g., diethyleneglycol monomethyl, monoethyl and monobutyl ethers, dipropyleneglycol monomethyl and monoethyl ethers, triethyleneglycol monomethyl and monoethyl ethers and tripropyleneglycol monomethyl ether, as a rinse solvent for a substrate from which the pattern photoresist layer has been removed with a remover solution in the photolithographic processing of semiconductor devices. The rinse solvent is free from the problems in the toxicity to human body and environment pollution relative to waste disposal as well as the danger of fire. The rinse solvent is versatile to be applicable to both of the negative- and positive-working photoresist compositions. Further advantages are obtained by adding an aliphatic amine compound to the rinse solvent.

REFERENCES:
patent: 3988256 (1976-10-01), Vandermey et al.
patent: 4276186 (1981-06-01), Bakos et al.
patent: 4395479 (1983-07-01), Ward et al.
patent: 4535054 (1985-08-01), Brault et al.
patent: 4617251 (1986-10-01), Sizensky
patent: 4744834 (1988-05-01), Haq

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