Method for revealing semiconductor surface damage using surface

Details Method for revealing semiconductor surface damage using surface Method for revealing semiconductor surface damage using surface

1983-10-31

1986-01-28

Levy, Stewart J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, G01R 3126

Patent

active

045674310

ABSTRACT:
The presence of crystallographic damage in a semiconductor surface region is determined by surface photovoltage (SPV) measurements. Deviations from the idealized straight line SPV plot of photon flux (I.sub.o) versus reciprocal absorption coefficient (.alpha..sup.-1) in upward-facing concave form are used as a criterion of surface quality. This criterion is used to determine the minimum etching required to remove the damaged surface.

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patent: 4433288 (1984-02-01), Moore
patent: 4454472 (1984-06-01), Moore
patent: 4494069 (1985-01-01), Lin
A. M. Goodman, "Improvements in Method and Apparatus for Determining Minority Carrier Diffusion Length," International Electron Devices Meeting, Dec. 1980, pp. 231-234.
The American Society for Testing and Materials, "Minority Carrier Diffusion Length in Silicon by Measurement of Steady-State Surface Photovoltage," ANSI/ASTM standard F391-78, pp. 770-776.
A. M. Goodman, "Silicon-Wafer-Surface Damage Revealed by Surface Photovoltage Measurements," J. Appl. Phys. 53(11), Nov. 1982, pp. 7561-7565.
A. M. Goodman et al., "Silicon-Wafer Process Evaluation Using Minority-Carrier Diffusion-Length Measurement by the SPV Method," RCA Review, 44, 6 (1983), pp. 326-341.
C. Kittel, "Introduction to Solid State Physics," Wiley & Sons, 1956, pp. 536-561.

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