Method for revealing crystalline defects and/or stress field...

Details Method for revealing crystalline defects and/or stress field... Method for revealing crystalline defects and/or stress field...

2006-05-09

2006-05-09

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Adhesive or autogenous bonding of two or more...

C216S020000, C216S088000, C438S456000, C438S694000

Reexamination Certificate

active

07041227

ABSTRACT:
A process for permitting defects or stresses in a structure to be revealed, including (a) securing by molecular bonding of a face of a first element containing crystalline material with a face of a second element containing crystalline material, so that the faces have offset crystalline lattices, the securing causing the formation of a lattice of crystalline defects and/or stress fields in a crystalline zone next to the securing interface, and (b) reducing the thickness of one of the elements until at least a thin film is obtained which adheres to the other element, along the securing interface to form the structure, the thickness of the thin film being such that its free face does not reveal the crystalline defect lattice and/or the stress fields, but allowing to perform (c) treatment of the thin film resulting in that its free face reveals the crystalline defect lattice and/or the stress fields.

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