Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor
Patent
1997-12-15
2000-10-03
Osele, Mark A.
Adhesive bonding and miscellaneous chemical manufacture
Methods
Surface bonding and/or assembly therefor
1562755, 156344, B32B 3500
Patent
active
061267724
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a method for removing a disused resist material (resist film image) present on an article such as a semiconductor wafer in the production of finely processed parts such as semiconductors, circuits, various printed boards, various masks and lead frames, and an adhesive or adhesive sheet for use in the method.
The following explanations are given mainly by reference to the production of semiconductor devices. However, the present invention should not be construed as being limited in applications thereof, and is applicable to any article on which a pattern comprising a resist material is present. The present invention is especially suitable for the removal of a disused ion-implanted resist material from a wafer in the production of a semiconductor device.
BACKGROUND ART
A lithographic step using a resist is utilized recently in various fields.
In this lithographic step, a resist applied on a substrate or the like is partly removed by development and the exposed areas or remaining areas are suitably processed. This step is intended to thus impart a desired function to the corresponding areas of the substrate. After completion of the function impartation, the resist is removed.
In the production of a semiconductor device, for example, a resist material is applied on a semiconductor substrate such as a silicon wafer, and an image comprising a resist pattern is formed by ordinary photoprocessing. This resist pattern is used as a mask to subject the exposed areas to various treatments such as implantation of ions, e.g., P.sup.+, B.sup.+, or As.sup.+, and etching. In the implantation treatment, such ions are implanted also in an upper surface layer of the resist film image. Thereafter, the disused resist material is removed to form a predetermined circuit. Subsequently, a cycle consisting of the re-application of a resist material, image formation, etching, and the removal of the resist material is repeated in order to form a next circuit. Also in the case of forming a circuit on various substrates, the resist material disused after the formation of a resist pattern is removed.
The removal of a disused resist material is generally accomplished with an asher (ashing means), a solvent (remover), a chemical, etc. However, use of an asher for resist material removal is disadvantageous in that the operation needs much time, and that impurity ions contained in the resist material and the implanted ions remain on the semiconductor substrate and come into the semiconductor substrate as a result of a heat treatment conducted later. This inclusion of ions arouses a fear that a semiconductor integrated circuit may not be formed as designed, so that there are cases where a semiconductor device having impaired properties results. When an oxygen plasma is used as an ashing means, there are cases where the semiconductor substrate may be damaged, resulting in a semiconductor device having impaired reliability.
Furthermore, the wet cleaning method using a solvent or chemical (wet process) is disadvantageous in that much labor is required, for example, for preventing reverse fouling by the liquid used and for the disposal of the liquid after use. In particular, in APM cleaning with an NH.sub.4 OH/H.sub.2 O.sub.2 /H.sub.2 O liquid mixture, there is another problem that the silicon substrate is etched, and an improvement in this respect is desired. There has been still another problem that the working atmosphere is impaired.
Under these circumstances, the present applicants proposed, in official gazettes including Unexamined Published Japanese Patent Applications Nos. 4-345015 and 5-275324, a method for resist material removal which comprises applying an adhesive sheet in the form of sheet, tape, or the like to the upper surface of a resist pattern and then peeling the adhesive sheet as a united sheet including the resist material. This method is free from the problems that impurity ions contained in the resist material are implanted in the wafer and that the working atmosphere is i
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Harada Chiaki
Hashimoto Koichi
Kihara Yasuo
Kubozono Tatsuya
Matsumura Takeshi
Nitto Denko Corporation
Osele Mark A.
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