Method for repairing photoresist layer defects using index...

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S417000, C029S603060, C029S603150, C204S192340, C204S192100, C360S230000, C360S237100, C438S455000, C438S458000, C438S946000, C451S005000, C451S041000

Reexamination Certificate

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07461446

ABSTRACT:
A method is presented for repairing damaged photomasks for electronic component fabrication processes, particularly for fabrication of the ABS of a disk drive slider. The method includes applying an overcoat of material having index of fraction which is close to the index of refraction of the photoresist material of the damaged photomask to produce a non-scattering boundary surface. The overcoat material preferably includes an overcoat base material which is a polymer having an index of refraction which is in the range of plus or minus 0.1 from the index of refraction of said photoresist material.

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patent: 2002/0102500 (2002-08-01), Hung et al.
patent: 2005/0042554 (2005-02-01), Dierichs et al.

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