Method for repairing opaque defects on semiconductor mask...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C356S433000, C356S448000

Reexamination Certificate

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10748075

ABSTRACT:
A method is disclosed for repairing an opaque defect on a mask substrate. After examining one or more opaque patterns in a predetermined area of the mask substrate, at least one opaque defect in the opaque patterns is identified based on a difference between its light reflection rate and a reference reflection rate. A residue height of the opaque defect is further determined based on its light transmission rate, and a repair formula such as an etching dosage is devised based on the determined residue height.

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patent: 6651226 (2003-11-01), Houge et al.
patent: 6891629 (2005-05-01), Jackson

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