Method for repairing attenuated phase shift masks

Details Method for repairing attenuated phase shift masks Method for repairing attenuated phase shift masks

2005-08-02

2005-08-02

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S394000

Reexamination Certificate

active

06924069

ABSTRACT:
A method for repairing an attenuated phase shift mask providing an attenuated phase shift mask comprising an etched opening and at least one underlying light attenuating layer to reveal a quartz substrate the opening including an unetched portion comprising the at least one light attenuating layer; blanket depositing a negative photoresist layer over the at least one light blocking layer to include filling at a portion of the opening; exposing the negative photoresist layer through the quartz substrate and developing the negative photoresist layer to form a negative photoresist layer portion filling a portion of the opening; and carrying out a dry etching process to remove the unetched portion.

REFERENCES:
patent: 5380609 (1995-01-01), Fujita et al.
patent: 5840445 (1998-11-01), Ikeda
patent: 6660653 (2003-12-01), Tzu et al.
patent: 2003/0228047 (2003-12-01), Chou et al.

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