Method for repairing a photolithographic mask, and a...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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10703298

ABSTRACT:
A method for repairing at least one defect of a light-influencing structure on a photolithographic mask with a mask substrate, in particular a quartz substrate, characterized in that in the region of at least one defect, gallium ions are radiated in a targeted manner for the purpose of implantation into the mask substrate and/or for the purpose of sputtering away material from the mask substrate. Furthermore, the invention relates to a photolithographic mask with a defect repaired in this way. As a result, defects in a light-influencing structure of a mask can be reliably repaired, and are repaired, respectively.

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patent: 6335129 (2002-01-01), Asano et al.
patent: 6346352 (2002-02-01), Hayden et al.
patent: 6368753 (2002-04-01), Harriott et al.
patent: 6447962 (2002-09-01), Yang
patent: 6534223 (2003-03-01), Yang
patent: 2003/0077524 (2003-04-01), Choi
patent: 3420353 (1984-12-01), None
patent: 10158339 (2003-05-01), None

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