Method for repairing a phase shift mask and a focused ion...

Details Method for repairing a phase shift mask and a focused ion... Method for repairing a phase shift mask and a focused ion...

2005-05-10

2005-05-10

Lee, John R. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S309000

Reexamination Certificate

active

06891171

ABSTRACT:
A method is provided for repairing a phase shift mask. The phase shift mask has a substrate and a shifter containing a defect and disposed on the substrate. An ion beam is irradiated onto the defect while a region of the shifter that includes the defect is supplied with a first gas containing silicon, an oxidizing second gas, and a third gas for controlling an amount of ions from the ion beam which penetrate the region of the shifter to form a silicon thin film on the defect and thereby repair the phase shift mask.

REFERENCES:
patent: 5639699 (1997-06-01), Nakamura et al.

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