Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1987-12-10
1989-07-18
Fields, Carolyn E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
430 5, 2504923, G21K 500
Patent
active
048496421
ABSTRACT:
According to the present invention, correction of a transparent defect of a photomask or rearrangement of a pattern film on a substrate such as semiconductor is corrected or rearranged by carrying out a first step in which an edge portion which requires a relatively high degree of precision is finished with a high degree of precision by irradiating it with a scanning focused ion beam within a short period of time and a second step in which the remaining portion to be corrected or rearranged including its peripheral portion is scanned with a focused ion beam so as to be corrected or rearranged, whereby the edge portion of a correcting or rearranging area with a relatively large area which has heretofore given rise to a problem is finished with a high degree of precision.
REFERENCES:
patent: 4727234 (1988-02-01), Oprysko et al.
Fields Carolyn E.
Miller John A.
Seiko Instruments Inc.
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