Method for repairing a defect generated cell using a laser

Semiconductor device manufacturing: process – Repair or restoration

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257529, 438601, 438940, H01L 21268

Patent

active

056656386

ABSTRACT:
The invention provides a method for repairing a defect-generated cell using a laser for disconnecting a defect-generated portion of a fuse conductive line in the fabricating process of semiconductor integrated circuits, characterized in that an insulation layer on the fuse conductive line is isotropically etched partially to a predetermined thickness for the purpose of refracting laser beam incident to the defect-generated portion of the fuse conductive line.

REFERENCES:
patent: 4602420 (1986-07-01), Saito
patent: 4826785 (1989-05-01), McClure et al.

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