Method for repair of photomasks

Details Method for repair of photomasks Method for repair of photomasks

2006-08-29

2006-08-29

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C216S066000

Reexamination Certificate

active

07097948

ABSTRACT:
The present invention relates to a method for removing etching assist gas from a fabrication system used during defect repair of a photomask in the fabrication of an integrated circuit, including: (a) inspecting the photomask and detecting a defect, the defect in a defect region; and (b) repairing the defect, wherein an amount, effective for the purpose of styrene is added to the system. By the method of the present invention, the amount of gas remaining on the MOS film is reduced, resulting in less surface defects present on the photomask.

REFERENCES:
patent: 3748975 (1973-07-01), Tarabocchia
patent: 4200668 (1980-04-01), Segal et al.
patent: 5965301 (1999-10-01), Nara et al.
patent: 6190836 (2001-02-01), Grenon et al.
patent: 6361904 (2002-03-01), Chiu
patent: 6531403 (2003-03-01), Ezaki et al.

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