Method for rendering non-platable semiconductor substrates plata

Coating processes – With pretreatment of the base – Preapplied reactant or reaction promoter or hardener

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427 92, 427305, 4274431, C23C 302

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active

044193904

ABSTRACT:
A process and compositions are described for the reception of electrolytic or electroless plating onto non-platable substrates, in particular, semiconductor substrates. The process comprises immersion of the non-platable substrate in a promoter composition containing primary metal ions, selected from the group consisting of nickel, cobalt, iron, and copper, and mixtures thereof, and a suitable reducing agent. The reducing agent is capable of chemically reacting with the non-platable substrate and the primary metal ions and the concentration of the reducing agent relative to the primary metal ions is so adjusted as to permit the initial chemical interaction of the reducing agent with the non-platable substrate and then the heterogeneous reduction of some of the primary metal ions present in the promoter composition. In addition, the promoter composition also comprises other metal ions selected from the group consisting of tin, cadmium, zinc, thallium, and lead and mixtures thereof, the other metal ions being in a sufficient concentration to inhibit the growth of metallic sites formed at the conclusion of the immersion of the non-platable substrate in the promoter composition.

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patent: 4002778 (1977-01-01), Bellis et al.
Lowenheim, F. A., Modern Electroplating, New York, John Wiley & Sons, Inc., 1974, pp. 630, 720, 727, 728.

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