Method for removing sub-micron particles from a semiconductor wa

Cleaning and liquid contact with solids – Processes – Using solid work treating agents

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134 26, 134 42, B08B 704

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active

056907494

ABSTRACT:
A method for removing particles (21-24) begins by providing a substrate (10). The substrate (10) contains one or more integrated circuit layers (12) having a top surface (12A). The particles (21-24) are in contact with top surface (12A). A tape (14) comprising an adhesion layer (16) and a carrier film (18) is applied to the surface (12A) such that the adhesion layer (16) is in contact with the particles (21-24). The tape (14) is then removed from the surface (12A) wherein the adhesion layer (16) is able to remove the particles (21-24) from the surface (12A) of the substrate (10). The tape (14) can be applied to a front or active surface of a semiconductor wafer, where the surface either has a topography containing high areas (37) and low areas (39) or has a planarized surface (12A) in order to reduce a total number of particles (21-24) on the surface (12A).

REFERENCES:
patent: 3080263 (1963-03-01), Conrose
patent: 3717897 (1973-02-01), Amos et al.
patent: 3754991 (1973-08-01), Amos et al.
patent: 4156619 (1979-05-01), Griesshammer
patent: 5320706 (1994-06-01), Blackwell

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