Method for removing silicon nitride material

Details Method for removing silicon nitride material Method for removing silicon nitride material

1998-09-14

1999-10-19

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, H01L 21302

Patent

active

059688467

ABSTRACT:
A etchant recipe including a mixed gas of one of a CH.sub.x F.sub.y group and CO gas is used to etch a silicon nitride layer by plasma etching so as to form a thin polymer layer to protect a silicon layer under the silicon nitride layer from over-etching. Then a soft etching is performed to remove the thin polymer. The etchant recipe is, for example, used in forming a contact opening on a gate of a MOS transistor, on which a silicon nitride layer is formed.

REFERENCES:
patent: 5053350 (1991-10-01), Solomon
patent: 5294294 (1994-03-01), Namose
patent: 5644153 (1997-07-01), Keller
patent: 5786276 (1998-07-01), Brooks et al.

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