Radiation imagery chemistry: process – composition – or product th – Stripping process or element
Reexamination Certificate
2006-09-12
2006-09-12
Le, Hoa Van (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Stripping process or element
C430S260000
Reexamination Certificate
active
07105265
ABSTRACT:
A method for removing a resist pattern having a resist pattern forming step of forming a resist pattern on a substrate using a chemically amplified positive resist composition and a removing step of removing the resist pattern from the substrate using a solvent,a composition prepared by dissolving (A) an alkali soluble resin having a hydroxyl group in the side chain, (B) a photo acid generator and (C) a compound represented by the following general formula (I):in-line-formulae description="In-line Formulae" end="lead"?H2C═CH—O—R1—O—CH═CH2 (I)in-line-formulae description="In-line Formulae" end="tail"? wherein R1represents an alkylene group having 1 to 10 carbon atoms or the like, in an organic solvent being used as the chemically amplified positive resist composition, the method further having a heat treatment step of heat-treating the substrate on which the resist pattern is formed at a temperature of 150 to 400° C. between the resist pattern forming step and the removing step.
REFERENCES:
patent: 6072006 (2000-06-01), Bantu et al.
patent: 2003/0130149 (2003-07-01), Zhou et al.
patent: 2004/0018446 (2004-01-01), Aoki et al.
patent: 58-194834 (1983-11-01), None
patent: 64-042653 (1989-02-01), None
patent: 06-230574 (1994-08-01), None
patent: 06-289614 (1994-10-01), None
patent: 07-134412 (1995-05-01), None
patent: 08-190205 (1996-07-01), None
patent: 08-202051 (1996-08-01), None
patent: 08-262746 (1996-10-01), None
patent: 09-006001 (1997-01-01), None
patent: 09-054442 (1997-02-01), None
patent: 09-096911 (1997-04-01), None
patent: 09-152721 (1997-06-01), None
patent: 2000-047400 (2000-02-01), None
patent: 2000-292927 (2000-10-01), None
patent: 2002-529552 (2002-09-01), None
Nakayama Kazuhiko
Ohnishi Hiroyuki
Takagi Isamu
Knobbe Martens Olson & Bear LLP
Le Hoa Van
Tokyo Ohka Kogyo Co. Ltd.
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