Method for removing residues formed during the manufacture...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S706000, C438S734000

Reexamination Certificate

active

08071486

ABSTRACT:
A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for a period of time sufficient to dissolve the residues in the dry water vapor.

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patent: 2004/0206120 (2004-10-01), Yamamura
patent: 0 746 016 (1996-04-01), None
patent: WO 00/07220 (2000-02-01), None
Lee et al. (IEEE Transactions on Electron Devices, IEDM 96-761, (1996), pp. 30.1.1-30.1.4).

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