Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-20
2007-03-20
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S637000, C438S906000, C438S963000, C257SE21229, C257SE21577
Reexamination Certificate
active
10908374
ABSTRACT:
A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resist pattern is stripped off. A through hole is plasma etched into the low-k dielectric film by using the metal pattern as a hard mask. The plasma etching causes residues to deposit within the through hole. A first wet treatment is then performed to soften the residues. A plasma dry treatment is carried out to crack the residues. A second wet treatment is performed to completely remove the residues.
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Huang Chun-Jen
Lin Miao-Chun
Weng Cheng-Ming
Fourson George R.
Hsu Winston
Parker John M.
United Microelectronics Corp.
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