Method for removing polymer as etching residue

Details Method for removing polymer as etching residue Method for removing polymer as etching residue

2007-04-03

2007-04-03

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S945000, C257SE21490

Reexamination Certificate

active

10904149

ABSTRACT:
A method for removing polymer as an etching residue is described. A substrate with polymer as an etching residue thereon is provided, and a hydrogen-containing plasma is used to treat the substrate. A wet clean step is then performed to remove the polymer from the substrate. The treatment using hydrogen-containing plasma can change the chemical property of the polymer, so that the polymer can be removed more easily in the subsequent wet clean step.

REFERENCES:
patent: 5702869 (1997-12-01), Chien et al.
patent: 6228563 (2001-05-01), Starov et al.
patent: 6837611 (2005-01-01), Kuo
patent: 6951823 (2005-10-01), Waldfried et al.
patent: 09283507 (1997-10-01), None

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